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SAMWIN
General Description Features
N-Channel MOSFET BVDSS (Minimum) RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) : 200 V : 0.4 ohm : 9.0 A : 26 nc : 72 W
SW630
This power MOSFET is produced in CHMC with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter block and SMPS. It's typical application is TV and monitor. D
G S
Absolute Maximum Ratings
Symbol
VDSS ID IDM VGS EAS EAR dv/dt PD TSTG,TJ TL Drain to Source Voltage Continuous Drain Current (@Tc=25) Continuous Drain Current (@Tc=100) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (@Tc=25) Derating Factor above 25 Operating junction temperature &Storage temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. (Note 2) (Note 1) (Note 3) (Note 1)
Parameter
Value
200 9 6.8 36 30 160 7.2 5.0 72 0.57 -55~+150 300
Units
V A A A V mJ mJ V/ns W W/
Thermal Characteristics
Value Symbol
RJC RCS RJA
Units Max
1.73 62.5 / W / W / W
Parameter
Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient
Min
-
Typ
0.5 -
1/6
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04.10.1
SAMWIN
Electrical Characteristics
Symbol Off Characteristics
BVDSS BVDSS/Tj Drain- Source Breakdown Voltage Breakdown Voltage Temperature coefficient Drain-Source Leakage Current Gate-Source Leakage Current IGSS Gate-Source Leakage Reverse VGS=0V,ID=250uA ID=250uA,referenced to 25 VDS=200V, VGS=0V IDSS VDS=160V, Tc=125 VGS=30V,VDS=0V VGS=-30V, VDS=0V 200 (Tc=25 unless otherwise noted)
SW630
Value Test Conditions Min Typ Max Unit s
Parameter
0.17
-
V V/
-
1 100 -100
uA nA nA
On Characteristics
VGS(th) RDS(ON) Gate Threshold Voltage Static Drain-Source On-state Resistance VDS=VGS,ID=250uA VGS=10V,ID=4.5A 2.0 4.0 0.4 V ohm
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS=0V,VDS=25V f=1MHz 770 120 35 pF
Dynamic Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge(Miller Charge) VDS=160V,VGS=10V, ID=9A (Note4,5) VDD=100V,ID=9A RG=50ohm (Note4,5) 4 10 40 140 150 140 34 nc ns
Source-Drain Diode Ratings and Characteristics
Symbol
IS ISM VSD trr Qrr
Parameter
Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Test Conditions
Integral Reverse p-n Junction Diode in the MOSFET G IS=9A,VGS=0V IS=9A,VGS=0V, dIF/dt=100A/us D
Min.
-
Typ.
140 0.77
Max.
9 36 1.5 -
Unit.
A
S
s
V ns uc
NOTES 1. Repeativity rating: pulse width limited by junction temperature 2. L=6.3mH,IAS=9A,VDD=50V,RG=0ohm, Starting TJ=25 3. ISD9A,di/dt100A/us,VDDBVDSS, Starting TJ=25 4. Pulse Test: Pulse Width300us,Duty Cycle2% 5. Essentially independent of operating temperature.
2/6
REV0.1
04.10.1
SAMWIN
VGS top: 15V 10V 9V 8V 7V 6V 5.5V 5V bottom:4.5V
SW630
10
1
4.5V
10
0
10
-1
10
-1
10
0
10
1
VDS,Drain-to-Source voltage [V]
Fig 1. On-State Characteristics
Fig 2. Transfer Characteristics
0.50
0.45 10 0.40 VGS=20V 0.35 VGS=10V
1
150
0.30 10
0
25
0.25
Note: 1.vGS=0v 2.250us test
0.20 0 2 4 6 8 10 12 14 16
10
-1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
ID, Drain Current [A]
VSD,Source-Drain Voltage[V]
Fig 3. On Resistance Variation vs. Drain Current and Gate Voltage
12
Fig 4. On State Current vs. Allowable Case Temperature
10
VDS=160V VDS=100V VDS=40V
8
6
4
2
Note:ID=9A
0 0 5 10 15 20 25
QG,Total Gate Charge [nC]
Fig 5. Capacitance Characteristics (Non-Repetitive)
3/6
Fig 6. Gate Charge Characteristics
REV0.1
04.10.1
SAMWIN
1.2
3.0 2.5
SW630
1.1
2.0
1.0
1.5
1.0
0.9
Note: 1.VGS=0V 2.ID=250uA
0.5
Note: 1.VGS=10V 2.ID=4.5A -50 0 50 100
o
0.8 -100
0.0
-50
0
50
100
o
150
200
150
TJ,Junction Temperatur [ C]
TJ,Junction Temperature[ C]
Fig 7. Breakdown Voltage Variation vs. Junction Temperature
10
2
Fig 8. On-Resistance Variation vs. Junction Temperature
10
Operation In This Area Limted By RDS(ON)
9 8
ID , Drain Current[A]
3
10us
10
1
7 6 5 4 3
100us 1ms 10ms
10
0
10
-1
Note: 1.Tc=25 C 2.Tj=150 C 3.Single Pulse
0
2 1
1 2
10
10
10
10
0 25
50
75
100
o
125
150
VD,Drain-Source Voltage[V]
Tc,Case Temperature [ C]
Fig9. Maximum Safe Operating
Fig 10. Maximum Drain Current Vs. Case Temperature
10
0
D = 0 .5 0 .2 0 .1 0 .0 5
10
-1
0 .0 2 0 .0 1
S IN G L E PULSE
N o te : 1 .Z (t)= 1 .7 3 JC
o
C /w
M
ax
2 .D u ty F a c to r ,D = t1 /t2 3 .T j-T c = P D M * Z (t) JC
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
t
1
,S q u a re
W
ave
P u ls e
D
u r a tio n
(s e c )
Fig 11. Transient Thermal Response Curve
4/6
REV0.1
04.10.1
SAMWIN
Same Type as DUT
300nF
SW630
VGS
10V
Qg Qgs Qgd
50K 200nF
VDS
VGS
DUT
1mA
Charge
Fig 12. Gate Charge test Circuit & Waveforms
RL VDS
VDD (0.5 rated VDS)
VDS
90%
10V
Pulse Generator
RG
DUT
Vin
10% tf
td(off)
td(on) tr ton
toff
Fig 13. Switching test Circuit & Waveforms
L VDS VDD BVDSS RG DUT 10V IAS VDD
1 BVDSS EAS= --- LLIAS2--------------2 BVDSS-VDD
ID(t)
VDS(t)
tp
Time
Fig 14. Unclamped Inductive Switching test Circuit & Waveforms
5/6
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SAMWIN
DUT
SW630
+
VDS
__
L
Driver RG Same Type as DUT VGS

VDD
dv/dt controlled by RG Is controlled by pulse period
VGS (Driver)
Gate Pulse Width D = --------------------------Gate Pulse Period
10V
IFM,Body Diode Forward Current di/dt IS (DUT) IRM Body Diode Reverse Current VDS (DUT)
Body Diode Recovery dv/dt Vf VDD
Body Diode Forward Voltage Drop Fig 15. Peak Diode Recovery dv/dt test Circuit & Waveforms
6/6
REV0.1
04.10.1

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